RF Micro Devices wins patent

RF Micro Devices announced it has been awarded a patent for its method of integrated power control, which is based on collector voltage control and designed to maximize transmitter yields and minimize design time. The technology is incorporated across the company’s GSM/GPRS PowerStar power amplifier modules. The integration of the power control function eliminates the need for directional couplers, detector diodes, power control ASICs and other power-control circuitry, the company said in a press release. In addition, the technology provides “high levels of repeatability” across power amplifier production and reduces lot-to-lot variation.